Design & Reuse
Catalog of SIP Cores
System on Chip design resources
arrow Arithmetic & Mathematic (46)
arrow Embedded Memories (996)
arrow I/O Library (1032)
arrow PLL (1746)
arrow Standard cell (756)
996 IP
901
0.0
The SST SuperFlash® IP is an embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability.
SuperFlash® is SST’s patented and proprietary NOR flash technology. With 80B+ devices shipped, SuperFlash is the non-volatile memory of choice for emb...
902
0.0
Signle Port High-Current SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port High-Current SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
903
0.0
Signle Port High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
904
0.0
Signle Port Multi-Bank High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port Multi-Bank High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT...
905
0.0
Single port SRAM Compiler - low power retention mode and column repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...
906
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k...
907
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LP - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k...
908
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 uLPeFlash - Memory optimized for high density and low power - Dual Voltage - compiler range up...
909
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...
910
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler range up to 320 k
Single Port SRAM compiler - TSMC 65 nm LP - Memory optimized for ultra high density and high speed - compiler range up to 320 k...
911
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...
912
0.0
Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
913
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
914
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
915
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
916
0.0
2KByte EEPROM in SMIC 130EF
...
917
0.0
1Kbyte EEPROM IP with configuration 64p8w16bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64...
918
0.0
1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
919
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
920
0.0
1Kbyte Embedded EEPROM with configuration 64p8w16bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64...
921
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
922
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...
923
0.0
1Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The AT1K32T40ULP6AA is organized as a 1K-bit by 32 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40ULP 1.1/2.5...
924
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in MXI- 0.1...
925
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
926
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
927
0.0
4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process
The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...
928
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Process
The ATO0004KX8TS180MSS3NA is organized as a 4Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in TSM- 0.18...
929
0.0
1Kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0001KX8TS040ULP5ZA is organized as 1 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
930
0.0
2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
931
0.0
2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process
The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...
932
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V BCD Process
The AT4K8V150BCD0AA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15um BCD process. ...
933
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD G...
934
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GII...
935
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT4K8V150BCD0AB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GIII proc...
936
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/6V SOI BCD EPI Process
The ATO0004KX8VI150SOI3XX00A is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm SO...
937
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XH180TG34DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in X-FA- 0....
938
0.0
8kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XF180HMH4DA is organized as a 8k-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...
939
0.0
4Kx9 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 12LP+ 0.8V/1.8V Process
The ATO0004KX9GF012LPP8ZA is organized as 4K-bits by 9 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Globa-Foundr--...
940
0.0
Global Foundries 22FDX-PLUS Ultra Low Voltage Option Single Port SRAM
Single Port SRAM Compiler with dedicated Standby Mode, optional array source biasing and separate array/periphery power supplies for ultra low leakage...
941
0.0
eNOR embedded Flash embedded IP
Zhuhai Chuangfeixin’s Floating-gate eNOR Flash memory macro are silicon characterized and qualified on Huali Microelectronics Corporation 65nm Floati...
942
0.0
LogicEE® Embedded EEPROM in CSMC 180nm~110nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
943
0.0
LogicEE® Embedded EEPROM in SMIC 180nm~55nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
944
0.0
LogicFlash Pro® Embedded Flash memory IP
LogicFlash Pro® eFlash是拥有自主知识产权的嵌入式闪存技术，可实现高性能、高可靠性的大容量存储。 产品开发验证中。...
945
0.0
LogicFlash® Embedded MTP in CSMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
946
0.0
LogicFlash® Embedded MTP in GlobalFoundries 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
947
0.0
LogicFlash® Embedded MTP in HHGrace 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
948
0.0
LogicFlash® Embedded MTP in Nexchip 150nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
949
0.0
LogicFlash® Embedded MTP in Silterra 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
950
0.0
LogicFlash® Embedded MTP in SMIC 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...